IGBT Transistors 600V UltraFast Trench IGBT
IRGB4045DPBF: IGBT Transistors 600V UltraFast Trench IGBT
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 12 A | Power Dissipation : | 77 W | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
| Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Voltage |
600 |
V |
|
IC @ TC = 25 |
Continuous Collector Current |
12 |
A |
|
IC @ TC = 100 |
Continuous Collector Current |
6.0 | |
|
ICM |
Pulse Collector Current |
20 | |
|
ILM |
Clamped Inductive Load Current |
20 | |
|
IF @ TC = 25 |
Diode Continous Forward Current |
8.0 | |
|
IF @ TC = 100 |
Diode Continous Forward Current |
4.0 | |
|
IFRM |
Diode Maximum Forward Current |
20 | |
|
VGE |
Continuous Gate-to-Emitter Voltage |
±20 |
V |
| Transient Gate-to-Emitter Voltage |
±30 | ||
|
PD @ TC = 25 |
Maximum Power Dissipation |
77 |
W |
|
PD @ TC = 100 |
Maximum Power Dissipation |
39 | |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Technical/Catalog Information | IRGB4045DPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 12A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 6A |
| Power - Max | 77W |
| Mounting Type | Through Hole |
| Package / Case | TO-220AB |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGB4045DPBF IRGB4045DPBF |