IRGB4056DPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Package / Case : TO-220AB
Collector-Emitter Saturation Voltage : 1.85 V
Continuous Collector Current at 25 C : 24 A
Power Dissipation : 140 W


Features:

• Low V_{CE (ON)} Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175
• 5 S short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (I_LM)
• Positive V_{CE (ON)} Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25	Continuous Collector Current	24	A
IC @ TC = 100	Continuous Collector Current	12
ICM	Pulse Collector Current	48
ILM	Clamped Inductive Load Current	48
IF @ TC = 25	Diode Continous Forward Current	24
IF @ TC = 100	Diode Continous Forward Current	12
IFRM	Diode Maximum Forward Current	48
VGE	Continuous Gate-to-Emitter Voltage	±20	V
	Transient Gate-to-Emitter Voltage	±30
PD @ TC = 25	Maximum Power Dissipation	140	W
PD @ TC = 100	Maximum Power Dissipation	70
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw	10 lbf`in (1.1 N`m)

Parameters:

Technical/Catalog Information	IRGB4056DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	24A
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 12A
Power - Max	140W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGB4056DPBF IRGB4056DPBF