IRGB4059DPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Package / Case : TO-220AB
Power Dissipation : 56 W
Collector-Emitter Saturation Voltage : 2.05 V
Continuous Collector Current at 25 C : 8 A


Features:

• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5s SCSOA
• Square RBSOA
• 100% of The Parts Tested for 4X Rated Current (ILM)
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Breakdown Voltage	600	V
IC@ TC = 25°C	Continuous Collector Current	8	A
IC@ TC = 100°C	Continuous Collector Current	4
ICM	Pulsed Collector Current	16
ILM	Clamped Inductive Load Current	16
IF@TC=25°C	Diode Continuous Forward Current	8
IF@TC=100°C	Diode Continuous Forward Current	4
IFM	Diode Maximum Forward Current	16
VGE	Continuous Gate-to-Emitter Voltage	± 20	V
	Transient Gate-to-Emitter Voltage	± 30
PD @ TC =25°	Maximum Power Dissipation	56	W
PD @ TC =100°	Maximum Power Dissipation	28
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case)

Parameters:

Technical/Catalog Information	IRGB4059DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	8A
Vce(on) (Max) @ Vge, Ic	2.05V @ 15V, 4A
Power - Max	56W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGB4059DPBF IRGB4059DPBF