IRGB4060DPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Package / Case : TO-220AB
Collector-Emitter Saturation Voltage : 1.85 V
Continuous Collector Current at 25 C : 16 A
Power Dissipation : 99 W


Features:

• Low V_{CE (on)} Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175
• 5s SCSOA
• Square RBSOA
• 100% of The Parts Tested for 4X Rated Current (I_LM)
• Positive V_{CE (on)} Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package




Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Breakdown Voltage	600	V
IC@ TC = 25	Continuous Collector Current	16	A
IC@ TC = 100	Continuous Collector Current	8
ICM	Pulsed Collector Current	32
ILM	Clamped Inductive Load Current	32
IF@TC=25	Diode Continuous Forward Current	16
IF@TC=100	Diode Continuous Forward Current	8
IFM	Diode Maximum Forward Current	32
VGE	Continuous Gate-to-Emitter Voltage	± 20	V
	Transient Gate-to-Emitter Voltage	± 30
PD @ TC =25°	Maximum Power Dissipation	99	W
PD @ TC =100°	Maximum Power Dissipation	50
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case)

Parameters:

Technical/Catalog Information	IRGB4060DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	16A
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 8A
Power - Max	99W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGB4060DPBF IRGB4060DPBF