IRGB4061DPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.95 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Continuous Collector Current at 25 C : 36 A
Power Dissipation : 206 W
Package / Case : TO-220AB


Features:

• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 S short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25	Continuous Collector Current	36	A
IC @ TC = 100	Continuous Collector Current	18	A
ICM	Pulse Collector Current (Ref. Fig. C.T.4)	72	A
ILM	Clamped Inductive Load Current	72	A
IF @TC = 25	Diode Continous Forward Current	36	A
IF @TC = 25	Diode Continous Forward Current	18	A
IFRM	Maximum Repetitive Forward Current	72	A
VGE	Continuous Gate-to-Emitter Voltage	±20	V
	Transient Gate-to-Emitter Voltage	±30	V
PD @ TC = 25°C	Maximum Power Dissipation	206	W
PD @ TC = 100°C	Maximum Power Dissipation	103	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw	10 lbf`in (1.1 N`m)

Parameters:

Technical/Catalog Information	IRGB4061DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	36A
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 18A
Power - Max	206W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGB4061DPBF IRGB4061DPBF