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MFG:IR  D/C:06+  

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Part Number: IRGB4064DPbF

 

MFG: IR

 

D/C: 06+

 

Urgent Purchase

IRGB4064DPbF Maximum Ratings

  Parameter
Max.
Units
VCES
 Collector-to-Emitter Voltage
600
V
IC @ TC = 25
 Continuous Collector Current
20
A
IC @ TC = 100
 Continuous Collector Current
10
ICM
 Pulse Collector Current (Ref. Fig. C.T.4)
40
ILM
 Clamped Inductive Load Current
40
IF @ TC = 25
 Diode Continous Forward Current
20
IF @ TC = 100
 Diode Continous Forward Current
10
IFM
 Maximum Repetitive Forward Current
40
VGE
 Continuous Gate-to-Emitter Voltage
±20
V
Transient Gate-to-Emitter Voltage
±30
PD @ TC = 25
 Maximum Power Dissipation
101
W
PD @ TC = 100
 Maximum Power Dissipation
50
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
  Mounting Torque, 6-32 or M3 Screw
10 lbf`in (1.1 N`m)
  

IRGB4064DPbF Features

• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175
• 5s SCSOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package

IRGB4064DPbF datasheet

IRG4BAC50S
PDF/DataSheet Download

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