IRGB4064DPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 20 A
Package / Case : TO-220AB
Collector-Emitter Saturation Voltage : 1.91 V
Power Dissipation : 101 W


Features:

• Low V_{CE (on)} Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175
• 5s SCSOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive V_{CE (on)} Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package




Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25	Continuous Collector Current	20	A
IC @ TC = 100	Continuous Collector Current	10
ICM	Pulse Collector Current (Ref. Fig. C.T.4)	40
ILM	Clamped Inductive Load Current	40
IF @ TC = 25	Diode Continous Forward Current	20
IF @ TC = 100	Diode Continous Forward Current	10
IFM	Maximum Repetitive Forward Current	40
VGE	Continuous Gate-to-Emitter Voltage	±20	V
	Transient Gate-to-Emitter Voltage	±30
PD @ TC = 25	Maximum Power Dissipation	101	W
PD @ TC = 100	Maximum Power Dissipation	50
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw	10 lbf`in (1.1 N`m)

Parameters:

Technical/Catalog Information	IRGB4064DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	20A
Vce(on) (Max) @ Vge, Ic	1.91V @ 15V, 10A
Power - Max	101W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGB4064DPBF IRGB4064DPBF