IRGB4065PbF

Features:

 Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low V_CE(on) and Energy per Pulse (E_PULSE ^TM)
for improved panel efficiency
High repetitive peak current capability
Lead Free package


Specifications

Symbol	Parameter	Max.	Units
VGE	Gate-to-Emitter Voltage	±30	V
ID  @TC = 25	Continuous Collector Current, VGE @ 15V	70	A
ID  @,TC  = 100	Continuous Collector, VGE @ 15V	40
IRP @ TC  = 25	Repetitive Peak Current	205
PD  @TC = 25	Power Dissipation	178	W
PD @TC  = 100	Power Dissipation	71
	Linear Derating Factor	1.4	W/
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 150
	Soldering Temperature for 10 seconds	300
	Mounting Torque, 6-32 or M3 Screw	10lb`in (1.1N` m)	N

Description

This IGBT IRGB4065PbF is specifically designed for applications in Plasma Display Panels. This IRGB4065PbF utilizes advanced trench IGBT technology to achieve low V_CE(on) and low E_PULSE ^TM rating per silicon area which improve panel efficiency. Additional features are 150 operating junction temperature and high repetitive peak current capability. The IRGB4065PbF features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.