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MFG:168  

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Part Number: IRGB4065PbF

 

MFG: 168

 

 

Description: This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT...


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IRGB4065PbF General Description


This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSE TM rating per silicon area which improve panel efficiency. Additional features are 150 operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

IRGB4065PbF Maximum Ratings

Symbol
 Parameter
Max.
Units
VGE Gate-to-Emitter Voltage
±30
V
ID  @TC = 25
 Continuous Collector Current, VGE @ 15V
70
A
ID  @,TC  = 100
 Continuous Collector, VGE @ 15V
40
IRP @ TC  = 25
 Repetitive Peak Current
205
PD  @TC = 25
 Power Dissipation
178
W
PD @TC  = 100 Power Dissipation
71
 Linear Derating Factor
1.4
W/
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-40 to + 150
Soldering Temperature for 10 seconds
300
  Mounting Torque, 6-32 or M3 Screw
10lb`in (1.1N` m)
N

IRGB4065PbF Features

 Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSE TM)
for improved panel efficiency
High repetitive peak current capability
Lead Free package

IRGB4065PbF datasheet

IRG4BAC50S
PDF/DataSheet Download

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