MFG:IR Package Cooled:TO-220 D/C:05+
MFG: IR
Package Cooled: TO-220
D/C: 05+
Description: Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They prov...
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
500 |
V |
| ID @ TC = 25°C | Continuous Collector Current |
25 |
A |
| ID @ TC = 100°C | Continuous Collector Current |
15 | |
| ICM | Pulsed Collector Current |
50 | |
| ILM | Clamped Inductive Load Current |
50 | |
| IF @ TC = 100°C | Diode Continuous Forward Current |
12 | |
| IFM | Diode Maximum Forward Current |
50 | |
| VGE | Gate-to-Emitter Voltage |
± 20 |
V |
| PD @TC = 25°C | Max. Power Dissipation |
100 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
42 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. |
10 lbf•in (1.1 N•m) |
IRGB430UD2
PDF/DataSheet Download
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGB430U have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGB430...
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