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MFG:TO-220AB  Package Cooled:7850  D/C:IR  

IRGB4B60KD1 Product Image

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Part Number: IRGB4B60KD1

 

MFG: TO-220AB

Package Cooled: 7850

D/C: IR

 

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IRGB4B60KD1 Maximum Ratings

  Parameter Max. Units
VCES
 Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 11 A
IC @ TC = 100°C Continuous Collector Current 7.6
ICM Pulse Collector Current (Ref.Fig.C.T.5) 22
ILM Clamped Inductive Load current 22
IF @ TC = 25°C Diode Continuous Forward Current 11
IF @ TC = 100°C Diode Continuous Forward Current 6.7
IFM Diode Continuous Forward Current 22
VGE
 Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 63 W
PD @ TC = 100°C Maximum Power Dissipation 31
TJ
TSTG		 Operating Junction and
Storage Temperature Range 		-55 to +175 °C
  Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)

IRGB4B60KD1 Features

• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.

IRGB4B60KD1 datasheet

IRGB4B60KD1
PDF/DataSheet Download

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