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MFG:IR  Package Cooled:2007+  

IRGB5B120KDPbF Product Image

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Part Number: IRGB5B120KDPbF

 

MFG: IR

Package Cooled: 2007+

 

 

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IRGB5B120KDPbF Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25 Continuous Collector Current 12 A
IC @ TC =100 Continuous Collector Current 6.0
ICM Pulsed Collector Current 24
ILM Clamped Inductive Load Current 24
IF @ TC = 25 Diode Continuous Forward Current 12
IF @ TC =100 Diode Continuous Forward Current 6.0
IFM Diode Maximum Forward Current 24
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25 Maximum Power Dissipation 89 W
PD @ TC =100 Maximum Power Dissipation 36
TJ,TSTG Operating Junction and Storage Temperature Range -55 to +150  
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)  

IRGB5B120KDPbF Features

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 Package.
• Lead-Free

IRGB5B120KDPbF datasheet

IRG4BAC50S
PDF/DataSheet Download

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