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MFG:IR  D/C:06+  

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Part Number: IRGB6B60KDPbF

 

MFG: IR

 

D/C: 06+

 

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IRGB6B60KDPbF Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25 Continuous Collector Current 13 A
IC @ TC = 100 Continuous Collector Current 7.0
ICM Pulsed Collector Current 26
ILM Clamped Inductive Load Current 26
IF @ TC = 25 Diode Continuous Forward Current 13
IF @ TC = 100 Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 26
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25 Maximum Power Dissipation 90 W
PD @ TC = 100 Maximum Power Dissipation 36
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to +150
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)  
VCC = 80% (VCES), VGE = 20V, L = 100 H, RG = 100.

IRGB6B60KDPbF Features

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 is available in PbF as a Lead-Free

IRGB6B60KDPbF datasheet

IRG4BAC50S
PDF/DataSheet Download

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