Purchase IRGB6B60KPbF, In-stock IRGB6B60KPbF From SeekIC.
- Table of contents:
IRGB6B60KPbF
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Suppliers
DataSheet
General Description
IRGB6B60KPbF Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| ID @ TC = 25°C | Continuous Drain Current | 13 | A |
| ID TC =100°C | Continuous Drain Current | 7.0 | A |
| ICM | Pulsed Collector Current | 26 | |
| ILM | Clamped Inductive Load Current | 26 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | A |
| PD @ TC = 25 | Maximum Power Dissipation | 90 | W |
| PD @ TC = 100 | Maximum Power Dissipation |
36 |
W |
| TJ | Operating Junction and | -55 to +150 | W/ |
| TSTG | Storage Temperature Range | -55 to +150 | |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) |
IRGB6B60KPbF Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.
IRGB6B60KPbF Typical Application
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
IRG4BAC50S
PDF/DataSheet Download
- Datasheet: IRG4BAC50S
- File Size: 138592 KB
- Manufacturer:
- Click here to Download
- ·IRG4BAC50U
- INSULATED GATE BIPOLAR TRANSISTOR
- 186056 KB
- ·IRG4BAC50W
- INSULATED GATE BIPOLAR TRANSISTOR
- 167129 KB
- ·IRG4BC10K
- IRF [International Rectifier]
- Short Circuit Rated UltraFast IGBT
- 162414 KB
- ·IRG4BC10KD
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
- 215624 KB
- ·IRG4BC10S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
- 160816 KB
- ·IRG4BC10SD
- INSULATED GATE BIPOLAR TRANSISTOR
- 215797 KB
- ·IRG4BC10SD-L
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
- ·IRG4BC10SD-S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
IRGB6B60KPbF Relative Products
IRGB6B60KDPbF
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IRGB5B120KDPbF
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IRGB4B60KPBF
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