IRGB6B60KPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.8 V
Package / Case : TO-220AB
Continuous Collector Current at 25 C : 13 A
Power Dissipation : 90 W


Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.


Application

• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
ID @ TC = 25°C	Continuous Drain Current	13	A
ID TC =100°C	Continuous Drain Current	7.0	A
ICM	Pulsed Collector Current	26
ILM	Clamped Inductive Load Current	26
VGE	Gate-to-Emitter Voltage	± 20	A
PD @ TC = 25	Maximum Power Dissipation	90	W
PD @ TC = 100	Maximum Power Dissipation	36	W
TJ	Operating Junction and	-55 to +150	W/
TSTG	Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)

Parameters:

Technical/Catalog Information	IRGB6B60KPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	13A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 5A
Power - Max	90W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGB6B60KPBF IRGB6B60KPBF