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MFG:INTERNATIONALRECTIFIER  Package Cooled:DIP/SOP  D/C:08+  

IRGBC20F Product Image

IRG Series Datasheet download

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Part Number: IRGBC20F

 

MFG: INTERNATIONALRECTIFIER

Package Cooled: DIP/SOP

D/C: 08+

Description: Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current den...


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IRGBC20F General Description


Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.  They provide substantial benefits to a host of high-voltage, high- current applications.

IRGBC20F Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 16 A
IC @ TC = 100°C Continuous Collector Current 9.0
ICM Pulsed Collector Current 64
ILM Clamped Inductive Load Current 64
VGE Gate-to-Emitter Voltage ±20 V
EARV Reverse Voltage Avalanche Energy 5.0 mJ
PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to +150 °C
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw 10 lbf*in (1.1N*m)  

IRGBC20F Features

Switching-loss rating includes all "tail" losses
 Optimized for medium operating frequency ( 1 to
  10kHz)  See Fig. 1 for Current vs. Frequency curve

IRGBC20F datasheet

IRGBC20F
PDF/DataSheet Download

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