IRGBC20F Selling Leads, Price trend, IRGBC20F DataSheet download, circuit diagram from SeekIC.com

Features: Switching-loss rating includes all tail lossesOptimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 16 ...

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SeekIC No. : 004377762 Detail

IRGBC20F: Features: Switching-loss rating includes all tail lossesOptimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Unit...

IRGBC20F Data Sheet

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Part Number:: IRGBC20F
Supply Ability:: 5000

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Upload time: 2025/12/24

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IGBT IGNITION 430V 20A TO-220AB

Product Details

Description

Features:

Switching-loss rating includes all "tail" losses
Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve

Specifications

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C = 25°C	Continuous Collector Current	16	A
I_C @ T_C = 100°C	Continuous Collector Current	9.0
I_CM	Pulsed Collector Current	64
I_LM	Clamped Inductive Load Current	64
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	5.0	mJ
P_D @ T_C = 25°C	Maximum Power Dissipation	60	W
P_D @ T_C = 100°C	Maximum Power Dissipation	24	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to +150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Insulated Gate Bipolar Transistors (IGBTs)IRGBC20F from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC20F provides substantial benefits to a host of high-voltage, high- current applications.

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IRGBC20F

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