MFG:IR Package Cooled:TO-263 D/C:05+
MFG: IR
Package Cooled: TO-263
D/C: 05+
Description: Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current den...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 900 | V |
| IC @ TC = 25°C | Continuous Collector Current | 9.0 | A |
| IC @ TC = 100°C | Continuous Collector Current | 5.3 | |
| ICM | Pulsed Collector Current | 18 | |
| ILM | Clamped Inductive Load Current | 18 | |
| VGE | Gate-to-Emitter Voltage | ±20 | s |
| EARV | Reverse Voltage Avalanche Energy | 5.0 | V |
| PD @ TC = 25°C | Maximum Power Dissipation | 60 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 24 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw | 10 lbf*in (1.1N*m) |
IRGBC20M-S
PDF/DataSheet Download
Co-packaged IGBTs IRGBC20MD2-S are a natural extension of International Rectifier's well known IGBT line. The IRGBC20MD2-S provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high...
Co-packaged IGBTs IRGBC20MD2 are a natural extension of International Rectifier's well known IGBT line. The IRGBC20MD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-volt...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC20Mhave higher usable current densities than comparable bipolar transistors, while a the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC20Mp...
Insulated Gate Bipolar Transistors (IGBTs) IRGBC20K-S from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC...
Co-packaged IGBTs IRGBC20KD2-S are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, hig...
Co-packaged IGBTs IRGBC20KD2 are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-...
Price: 0.14-0.16 USD
3W, stereo, avoid voice distortion, without output filter, SOP16\DIP16, -0.3 to VCC + 0.3V
Price: 15-20 USD
DIP28, complete 12-Bit A/D converter, 16.5 V, 825 mW, 16-Bit Microprocessor
Price: 0.135-0.142 USD
NPN Silicon RF Transistor, SOT-343, 4.5 V, Base current IB 1 mA, up to 12 GHz, 1.15 dB at 1.8 GHz
Price: 1-2 USD
Voltage Regulator, 60mW, 100V, 6DI15S-050D
Price: 12.5-14.5 USD
TSOP-56, Intel StrataFlash memory, Multi-Level Cell Technology, 1.7 V – 2.0 V, High performance
Price: 19-22 USD
SVI3001, Sanyo Semicon Device , IGBT moudle, 1.5V,
Price: 2-3 USD
Low Power, 10/100-TX/FX Ethernet Transceiver, QFP, -0.5 V to +5.5 V, 0.3 W
Price: 1.31-1.42 USD
-0.5 V to +4.0V, 32 Megabit CMOS, 3.0 Volt-only, Flash Memory, 4 M x 8-Bit Uniform Sector
Price: 2.4-3.5 USD
1.5A Low Voltage, LDO Regulator, w/Dual Input Voltages
Price: 0.1-10 USD
drive IC, SOP, drive IC, 2.7 V ~ 5.5 V, 58W, 8A, BTS5233-2GS
Price: 1.25-1.3 USD
serial, real-time clock, DIP-8, I2C
Price: 35-42 USD
DC/DC Converter, DIP, output power to 3W, high isolation voltage, six-sided shielding
