MFG:IR Package Cooled:TO-263 D/C:05+
MFG: IR
Package Cooled: TO-263
D/C: 05+
Description: Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They prov...
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
13 |
A |
| IC @ TC =100°C | Continuous Collector Current |
8.0 | |
| ICM | Pulsed Collector Current |
26 | |
| ILM | Clamped Inductive Load Current |
26 | |
| IF @ TC =100°C | Diode Continuous Forward Current |
7.0 | |
| IFM | Diode Maximum Forward Current |
26 | |
| tsc | Short Circuit Withstand Time |
10 |
s |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| PD @ TC = 25°C | Maximum Power Dissipation |
60 |
W |
| PD @ TC =100°C | Maximum Power Dissipation |
24 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 |
°C |
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. |
10 lbf`in (1.1 N`m) |
IRGBC20MD2-S
PDF/DataSheet Download
Co-packaged IGBTs IRGBC20MD2 are a natural extension of International Rectifier's well known IGBT line. The IRGBC20MD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-volt...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC20Mhave higher usable current densities than comparable bipolar transistors, while a the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC20Mp...
Insulated Gate Bipolar Transistors (IGBTs) IRGBC20K-S from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC...
Co-packaged IGBTs IRGBC20KD2-S are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, hig...
Co-packaged IGBTs IRGBC20KD2 are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-...
Insulated Gate Bipolar Transistors (IGBTs) IRGBC20K from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC20...
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