MFG:INTERNATIONALRECTIFIER Package Cooled:DIP/SOP D/C:08+
MFG: INTERNATIONALRECTIFIER
Package Cooled: DIP/SOP
D/C: 08+
Description: Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They prov...
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
13 |
A |
| IC @ TC =100°C | Continuous Collector Current |
8.0 | |
| ICM | Pulsed Collector Current |
26 | |
| ILM | Clamped Inductive Load Current |
26 | |
| IF @ TC =100°C | Diode Continuous Forward Current |
7.0 | |
| IFM | Diode Maximum Forward Current |
60 | |
| tsc | Short Circuit Withstand Time |
10 |
s |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| PD @ TC = 25°C | Maximum Power Dissipation |
60 |
W |
| PD @ TC =100°C | Maximum Power Dissipation |
24 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 |
°C |
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. |
10 lbf`in (1.1 N`m) |
IRGBC20MD2
PDF/DataSheet Download
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC20Mhave higher usable current densities than comparable bipolar transistors, while a the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC20Mp...
Insulated Gate Bipolar Transistors (IGBTs) IRGBC20K-S from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC...
Co-packaged IGBTs IRGBC20KD2-S are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, hig...
Co-packaged IGBTs IRGBC20KD2 are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-...
Insulated Gate Bipolar Transistors (IGBTs) IRGBC20K from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC20...
Insulated Gate Bipolar Transistors (IGBTs)IRGBC20F from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC20F...
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