IRGBC20S Selling Leads, Price trend, IRGBC20S DataSheet download, circuit diagram from SeekIC.com

Features: • Switching-loss rating includes all tail losses• Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuo...

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SeekIC No. : 004377771 Detail

IRGBC20S: Features: • Switching-loss rating includes all tail losses• Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curveSpecifications Para...

IRGBC20S Data Sheet

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Part Number:: IRGBC20S
Supply Ability:: 5000

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Upload time: 2026/1/17

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IGBT IGNITION 430V 20A TO-220AB

Product Details

Description

Features:

• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve

Specifications

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C@ T_C= 25°C	Continuous Collector Current	19	A
I_C@ T_C =100°C	Continuous Collector Current	10
I_CM	Pulsed Collector Current	76
I_LM	Clamped Inductive Load Current	38
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	5.0	mJ
P_D @ T_C = 25°C	Maximum Power Dissipation	60	W
P_D @ T_C =100°C	Maximum Power Dissipation	24	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to +150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC20S have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC20S provides substantial benefits to a host of high-voltage, highcurrent applications.

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IRGBC20S

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