MFG:INTERNATIONALRECTIFIER Package Cooled:DIP/SOP D/C:08+
MFG: INTERNATIONALRECTIFIER
Package Cooled: DIP/SOP
D/C: 08+
Description: Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They prov...
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
23 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
14 | |
| ICM | Pulsed Collector Current |
46 | |
| ILM | Clamped Inductive Load Current |
46 | |
| IF @ TC = 100°C | Diode Continuous Forward Current |
12 | |
| IFM | Diode Maximum Forward Current |
46 | |
| tsc | Short Circuit Withstand Time |
10 |
s |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| PD @ TC = 25°C | Maximum Power Dissipation |
100 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
42 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
| Soldering Temperature, for 10 seconds |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
|
Parameter |
Typ. |
Max. |
Units | |
| RJC | Junction-to-Case - IGBT |
- |
1.2 |
°C/W |
| RJC | Junction-to-Case - Diode |
- |
2.5 | |
| RJA | Junction-to-Ambient, (PCB Mount)** |
- |
40 | |
| RJA | Junction-to-Ambient, typical socket mount |
- |
80 | |
| Wt | Weight |
2.0 (0.07) |
- |
g(oz) |
IRGBC30KD2-S
PDF/DataSheet Download
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. The IRGBC30KD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-c...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30K have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC30...
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. The IRGBC30FD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-c...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC30...
Co-packaged IGBTs IRGBC20UD2 are a natural extension of International Rectifier's well known IGBT line. The IRGBC20UD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-volt...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC20Uhave higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC20U...
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