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MFG:IR  Package Cooled:TO  

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Part Number: IRGBC30M-S

 

MFG: IR

Package Cooled: TO

 

Description: Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current den...


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IRGBC30M-S General Description


Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

IRGBC30M-S Maximum Ratings

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
26
A
IC @ TC =100°C Continuous Collector Current
16
ICM Pulsed Collector Current
52
ILM Clamped Inductive Load Current
52
tsc Short Circuit Withstand Time
10
s
VGE Gate-to-Emitter Voltage
±20
V
EARV Reverse Voltage Avalanche Energy
10
mJ
PD @ TC = 25°C Maximum Power Dissipation
100
W
PD @ TC =100°C Maximum Power Dissipation
42
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to +150
°C
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)

IRGBC30M-S Features

• Short circuit rated - 10s @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

IRGBC30M-S datasheet

IRGBC30M-S
PDF/DataSheet Download

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