MFG:110 Package Cooled:IR D/C:05+
MFG: 110
Package Cooled: IR
D/C: 05+
Description: Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current den...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
26 |
A |
| IC @ TC =100°C | Continuous Collector Current |
16 | |
| ICM | Pulsed Collector Current |
52 | |
| ILM | Clamped Inductive Load Current |
52 | |
| tsc | Short Circuit Withstand Time |
10 |
s |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
10 |
mJ |
| PD @ TC = 25°C | Maximum Power Dissipation |
100 |
W |
| PD @ TC =100°C | Maximum Power Dissipation |
42 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 |
°C |
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
IRGBC30M
PDF/DataSheet Download
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC30K-Sprovid...
Co-packaged IGBTs IRGBC30KD2-S are a natural extension of International Rectifier's well known IGBT line. The IRGBC30KD2-Sprovides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-...
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. The IRGBC30KD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-c...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30K have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC30...
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. The IRGBC30FD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-c...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC30...
Price: 6.025-6.916 USD
field programmable gate array, 144-TQFP, –0.5 to 2.4 V, –25 to 25 mA
Price: 10-35 USD
TFT-LCD Module, -0.3 to 4.0V, Slim and compact, Pixel in stripe configuration, Slim module
Price: 4.3-5 USD
12-bit data acquisition system, +2.5V, 85 mW, PQFP, AD7891ASZ1, Analog Devices
Price: 0.1-2 USD
Micro Switch, D2FC-F-7N, OMRON Corporation
Price: 0.0001-5 USD
DIP, Low Power, High Reliability, 2-wire serial EEPROM, 6.25V, 5.0 mA
Price: 1-1.4 USD
flash memory, TSSOP, –0.5 V to 3.7 V, 100 mA, Flexible Smart Voltage Technology
Price: 0.25-0.39 USD
transient absorption zensor, DO-214, 5.0 to 170V
Price: 10-35 USD
6MBP100RTA060, MODULE, FUJI
Price: 0.13-0.16 USD
XPT4963, DIP14\SOP14, XPTEK TECHNOLOGY CO.,LTD
Price: 0.8-0.85 USD
1A Step-Down Voltage Regulator, TO-220, low power standby mode, High Efficiency
Price: 0.1-0.3 USD
LinkSwitch-LP switcher IC, DIP8, -0.3 V to 9 V, 100 mA, Lowest component count switcher, Very tigh...
Price: 5.56-6.03 USD
instrumentation amplifier, 1MHz, 16SOIC, 20mA, 4.5 V ~ 36 V, RoHS Compliant
