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IRGBC30S

Features: • Switching-loss rating includes all tail losses• Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency CurveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuo...

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IRGBC30S: Features: • Switching-loss rating includes all tail losses• Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency CurveSpecifications Para...

IRGBC30S Data Sheet

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Part Number:
IRGBC30S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency Curve


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
34
A
IC @ TC =100°C Continuous Collector Current
18
ICM Pulsed Collector Current
68
ILM Clamped Inductive Load Current
68
VGE Gate-to-Emitter Voltage
±20
V
EARV Reverse Voltage Avalanche Energy
10
mJ
PD @ TC = 25°C Maximum Power Dissipation
100
W
PD @ TC =100°C Maximum Power Dissipation
42
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to +150
°C
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30S have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC30S provides substantial benefits to a host of high-voltage, highcurrent applications.




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