MFG:INTERNATIONALRECTIFIER Package Cooled:DIP/SOP D/C:08+
MFG: INTERNATIONALRECTIFIER
Package Cooled: DIP/SOP
D/C: 08+
Description: Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current den...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
34 |
A |
| IC @ TC =100°C | Continuous Collector Current |
18 | |
| ICM | Pulsed Collector Current |
68 | |
| ILM | Clamped Inductive Load Current |
68 | |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
10 |
mJ |
| PD @ TC = 25°C | Maximum Power Dissipation |
100 |
W |
| PD @ TC =100°C | Maximum Power Dissipation |
42 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 |
°C |
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
IRGBC30S
PDF/DataSheet Download
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30M-S have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC...
Co-packaged IGBTs IRGBC30MD2-S are a natural extension of International Rectifier's well known IGBT line. The IRGBC30MD2-Sprovides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-...
Co-packaged IGBTs IRGBC30MD2 are a natural extension of International Rectifier's well known IGBT line. The IRGBC30MD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-volt...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC30Mprovides...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC30K-Sprovid...
Co-packaged IGBTs IRGBC30KD2-S are a natural extension of International Rectifier's well known IGBT line. The IRGBC30KD2-Sprovides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-...
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