Features: • Switching-loss rating includes all tail losses• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuou...
IRGBC30U: Features: • Switching-loss rating includes all tail losses• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Param...
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
23 |
A |
| IC @ TC =100°C | Continuous Collector Current |
10 | |
| ICM | Pulsed Collector Current |
92 | |
| ILM | Clamped Inductive Load Current |
92 | |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
10 |
mJ |
| PD @ TC = 25°C | Maximum Power Dissipation |
100 |
W |
| PD @ TC =100°C | Maximum Power Dissipation |
42 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 |
°C |
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30U have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC30U provides substantial benefits to a host of high-voltage, highcurrent applications.