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IRGBC40M

Features: • Short circuit rated - 10µs @ 125°C, VGE = 15V• Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz)Specifications Parameter Max. Units Collector-to-Emitter Voltage V DSS 600 A ...

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SeekIC No. : 004377790 Detail

IRGBC40M: Features: • Short circuit rated - 10µs @ 125°C, VGE = 15V• Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz)Specificatio...

IRGBC40M Data Sheet

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Part Number:
IRGBC40M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Short circuit rated - 10µs @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz)


Specifications

Parameter
Max.
Units
Collector-to-Emitter Voltage
V DSS
600
A
Continuous Drain Current
I D
40
Power Dissipation
I DM
24
Clamped Inductive Load Current
P D
80
Ω
Short Circuit Withstand Time
R DS(ON)
80
W/K ?
Gate-to-Emitter Voltage
C ISS
10
V
Reverse Voltage Avalanche Energy
Q g
15
mJmW
Maximum Power Dissipation
t td(on)
96g
ns
Operating Junction and
Storage Temperature Range
t tr

-55 to +150

TurnOff Delay Time
t td(off)

50

Fall Time
t f



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC40M have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC40M provides substantial benefits to a host of high-voltage, highcurrent applications. Description




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