Features: Switching-loss rating includes all tail lossesOptimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 900 V IC @ TC = 25°C Continuous Collector Current 9.0...
IRGBF20F: Features: Switching-loss rating includes all tail lossesOptimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Unit...
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
Parameter | Max. | Units | |
VCES | Collector-to-Emitter Voltage | 900 | V |
IC @ TC = 25°C | Continuous Collector Current | 9.0 | A |
IC @ TC = 100°C | Continuous Collector Current | 5.3 | |
ICM | Pulsed Collector Current | 18 | |
ILM | Clamped Inductive Load Current | 18 | |
VGE | Gate-to-Emitter Voltage | ±20 | V |
EARV | Reverse Voltage Avalanche Energy | 5.0 | mJ |
PD @ TC = 25°C | Maximum Power Dissipation | 60 | W |
PD @ TC = 100°C | Maximum Power Dissipation | 24 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
Mounting torque, 6-32 or M3 screw | 10 lbf*in (1.1N*m) |
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBF20F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBF20F provides substantial benefits to a host of high-voltage, high- current applications.