IRGBF20F

Features: Switching-loss rating includes all tail lossesOptimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 900 V IC @ TC = 25°C Continuous Collector Current 9.0...

product image

IRGBF20F Picture
SeekIC No. : 004377794 Detail

IRGBF20F: Features: Switching-loss rating includes all tail lossesOptimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Unit...

floor Price/Ceiling Price

Part Number:
IRGBF20F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

Switching-loss rating includes all "tail" losses
 Optimized for medium operating frequency ( 1 to
  10kHz)  See Fig. 1 for Current vs. Frequency curve



Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 900 V
IC @ TC = 25°C Continuous Collector Current 9.0 A
IC @ TC = 100°C Continuous Collector Current 5.3
ICM Pulsed Collector Current 18
ILM Clamped Inductive Load Current 18
VGE Gate-to-Emitter Voltage ±20 V
EARV Reverse Voltage Avalanche Energy 5.0 mJ
PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to +150 °C
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw 10 lbf*in (1.1N*m)  



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBF20F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.  The IRGBF20F provides substantial benefits to a host of high-voltage, high- current applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Line Protection, Backups
Sensors, Transducers
Hardware, Fasteners, Accessories
Boxes, Enclosures, Racks
Optoelectronics
View more