Purchase IRGCH70KE, In-stock IRGCH70KE From SeekIC.
MFG:Other Category:Other
Part Number: IRGCH70KE
Category: Other
MFG: Other
Description: IRGCH70KE is a kind of IGBT die in wafer form.
What comes next is about the electrical characterist...
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IRGCH70KE
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DataSheet
General Description
IRGCH70KE General Description
IRGCH70KE is a kind of IGBT die in wafer form.
What comes next is about the electrical characteristics (wafer form) of IRGBF30F. The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 3.3 V at IC=20 A, TJ=25, VGE=15 V. The minimum V(BR)CES (Colletor-to-Emitter Breakdown Voltage) is 1200 V at TJ=25, ICES=250A, VGE=0 V. The minimum VGE(th) (Gate Threshold Voltage) is 3.0 V and the maximum is 6.0 V at VGE=VCE, TJ=25, IC=250A. The maximum ICES (Zero Gate Voltage Collector Current) is 250A at TJ=25, VCE=1200 V. The maximum IGES (Gate-to-Emitter Leakage Current) is ± 500 nA at TJ=25, VGE=±20 V.
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IRGCH70KE Maximum Ratings
IRGCH70KE Features
IRGCH70KE
PDF/DataSheet Download
- Datasheet: IRGCH70KE
- File Size: 19352 KB
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- INSULATED GATE BIPOLAR TRANSISTOR
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- INSULATED GATE BIPOLAR TRANSISTOR
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- INSULATED GATE BIPOLAR TRANSISTOR
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- ·IRG4BC10K
- IRF [International Rectifier]
- Short Circuit Rated UltraFast IGBT
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- ·IRG4BC10KD
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
- 215624 KB
- ·IRG4BC10S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
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- ·IRG4BC10SD
- INSULATED GATE BIPOLAR TRANSISTOR
- 215797 KB
- ·IRG4BC10SD-L
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
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