IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT
IRGR3B60KD2PBF: IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 2.4 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 7.8 A | Power Dissipation : | 52 W | ||
| Package / Case : | DPAK | Packaging : | Tube |
| Parameter |
Max. |
Units | |
| VGE | Collector-to-Emitter Voltage |
600 |
V |
| IC@TC = 25 |
Continuous Collector Current |
7.8 |
A |
| IC@TC = 100 |
Continuous Collector Current |
4.2 | |
| ICM | Pulse Collector Current (Ref.Fig.C.T.5) |
15.6 | |
| ILM | Clamped Inductive Load current |
15.6 | |
| IF@TC = 25 |
Diode Continous Forward Current |
6.0 | |
| IF@TC = 100 |
Diode Continuous Forward Current |
3.2 | |
| IFM | Diode Maximum Forward Current |
15.6 | |
| PD@TC = 25 | Maximum Power Dissipation |
±20 |
V |
| PD@TC = 100 | Maximum Power Dissipation |
52 |
W |
| T J TSTG |
Operating Junction and Storage Temperature Range |
21 | |
| Soldering Temperature for 10 seconds |
-55 to +150 |
| |
| Soldering Temperature Range, for 10 sec. |
300 (0.063 in. (1.6mm) from case) |
| Technical/Catalog Information | IRGR3B60KD2PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 7.8A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 3A |
| Power - Max | 52W |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGR3B60KD2PBF IRGR3B60KD2PBF |