IGBT Transistors
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
| Collector-Emitter Saturation Voltage : | 2.35 V | Maximum Gate Emitter Voltage : | +/- 20 V |
| Continuous Collector Current at 25 C : | 78 A | Power Dissipation : | 370 W |
| Maximum Operating Temperature : | + 150 C | Package / Case : | D2PAK |
| Packaging : | Tube |
| Technical/Catalog Information | IRGS30B60KPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 78A |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 30A |
| Power - Max | 370W |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGS30B60KPBF IRGS30B60KPBF |