IGBT Transistors
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 12 A | Power Dissipation : | 63 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | D2PAK |
Packaging : | Tube |
Technical/Catalog Information | IRGS4B60KD1PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 11A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A |
Power - Max | 63W |
Mounting Type | Surface Mount |
Package / Case | D²Pak, TO-263 (2 leads + tab) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRGS4B60KD1PBF IRGS4B60KD1PBF |