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| Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Voltage |
600 |
|
|
IC @ TC = 25 |
Continuous Collector Current |
22 |
A |
|
IC @ TC = 100 |
Continuous Collector Current |
12 | |
|
ICM |
Pulse Collector Current (Ref. Fig. C.T.4) |
44 | |
|
ILM |
Clamped Inductive Load Current |
44 | |
|
IF @ TC = 25 |
Diode Continous Forward Current |
22 | |
|
IF @ TC = 100 |
Diode Continous Forward Current |
10 | |
|
IFRM |
Maximum Repetitive Forward Current |
44 | |
|
VGE |
Gate-to-Emitter Voltage |
±20 |
V |
|
PD @ TC = 25 |
Maximum Power Dissipation |
156 |
W |
|
PD @ TC = 100 |
Maximum Power Dissipation |
62 | |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 |
|
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) |
IRG4BAC50S
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