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MFG:IR  

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Part Number: IRGSL30B60K

 

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IRGSL30B60K Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 78 A
IC @ TC = 100°C Continuous Collector Current 50
ICM Pulse Collector Current(Ref.Fig.C.T.5) 120
ILM Clamped Inductive Load current 120
VISOL RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 V
VGE Gate-to-Emitter Voltage ±20
PD @ TC = 25°C Maximum Power Dissipation 370 W
PD @ TC = 100°C Maximum Power Dissipation 180
TJ
TSTG
Operating Junction and Storage Temperature Range -55 to +175 °C
  Soldering Temperature, for 10 sec. 300(0.063 in.(1.6mm)fromcase)
  Mounting Torque, 6-32 or M3 Screw 10 lbf`in (1.1 N`m)  

IRGSL30B60K Features

• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.

IRGSL30B60K datasheet

IRGSL30B60K
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