IRGSL4B60KD1PBF

IGBT Transistors 600V Low-Vceon Non Punch Through

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IRGSL4B60KD1PBF: IGBT Transistors 600V Low-Vceon Non Punch Through

floor Price/Ceiling Price

US $ .94~1.91 / Piece | Get Latest Price
Part Number:
IRGSL4B60KD1PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.91
  • $1.31
  • $.95
  • $.94
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 12 A Power Dissipation : 63 W
Package / Case : TO-262 Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 12 A
Power Dissipation : 63 W
Package / Case : TO-262


Parameters:

Technical/Catalog InformationIRGSL4B60KD1PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)11A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 4A
Power - Max63W
Mounting TypeThrough Hole
Package / CaseTO-262-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRGSL4B60KD1PBF
IRGSL4B60KD1PBF



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