IGBT Transistors 600V Low-Vceon Non Punch Through
IRGSL4B60KD1PBF: IGBT Transistors 600V Low-Vceon Non Punch Through
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 12 A | Power Dissipation : | 63 W | ||
| Package / Case : | TO-262 | Packaging : | Tube |
| Technical/Catalog Information | IRGSL4B60KD1PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 11A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A |
| Power - Max | 63W |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGSL4B60KD1PBF IRGSL4B60KD1PBF |