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IRGSL8B60KPbF

Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10s Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Lead-Free.Specifications Parameter Symbol Rating Unit Collector-to-Emitter Voltage VCES 600 V Contin...

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SeekIC No. : 004377935 Detail

IRGSL8B60KPbF: Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10s Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.• Lead-Free.Specifi...

IRGSL8B60KPbF Data Sheet

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Part Number:
IRGSL8B60KPbF
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• 10s Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.


Specifications

Parameter Symbol Rating Unit
Collector-to-Emitter Voltage VCES 600 V
Continuous Collector Current IC @ TC = 25 28 A
Continuous Collector Current IC @ TC = 100 19 A
Pulse Collector Current (Ref.Fig.C.T.5) ICM 56 A
Clamped Inductive Load current ILM 56  
Gate-to-Emitter Voltage VGE ±20 V
Maximum Power Dissipation PD @ TC = 25 167 W
Maximum Power Dissipation PD @ TC = 100 83 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 175
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)



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