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IRGVH50F

Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation 3 kHz - 8 kHz• High operating frequency• Switching-loss rating includes all tail lossesSpecifications Parameter Max. Units ...

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SeekIC No. : 004377936 Detail

IRGVH50F: Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation 3 kHz - 8 kHz• High operating frequency• S...

IRGVH50F Data Sheet

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Part Number:
IRGVH50F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation 3 kHz - 8 kHz
• High operating frequency
• Switching-loss rating includes all "tail" losses


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 45 A
IC @ TC = 100°C Continuous Collector Current 25 A
ICM Pulsed Collector Current 180 A
ILM Clamped Inductive Load Current 90 A
VGE Reverse Voltage Avalanche Energy ±20 mJ
PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 80 W
TJ TSTG Operating Junction and
Storage Temperature Range		 -55 to +150 °C
  Lead Temperature 300 (0.063 in. (1.6mm) from case) °C
  Weight 10.5 (typical) g



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGVH50F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGVH50F provides substantial benefits to a host of high-voltage, high-current applications.

The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device.




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