Position: Home  > All Categories> Integrated Circuits (ICs) > IRGVH50F

IRGVH50F

Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation 3 kHz - 8 kHz• High operating frequency• Switching-loss rating includes all tail lossesSpecifications Parameter Max. Units ...

product image

IRGVH50F Picture
See larger image
SeekIC No. : 004377936 Detail

IRGVH50F: Features: • Electrically Isolated and Hermetically Sealed• Simple Drive Requirements• Latch-proof• Fast Speed operation 3 kHz - 8 kHz• High operating frequency• S...

IRGVH50F Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRGVH50F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation 3 kHz - 8 kHz
• High operating frequency
• Switching-loss rating includes all "tail" losses


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 45 A
IC @ TC = 100°C Continuous Collector Current 25 A
ICM Pulsed Collector Current 180 A
ILM Clamped Inductive Load Current 90 A
VGE Reverse Voltage Avalanche Energy ±20 mJ
PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 80 W
TJ TSTG Operating Junction and
Storage Temperature Range		 -55 to +150 °C
  Lead Temperature 300 (0.063 in. (1.6mm) from case) °C
  Weight 10.5 (typical) g



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGVH50F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGVH50F provides substantial benefits to a host of high-voltage, high-current applications.

The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Undefined Category
VI-B63-IU
X27 589
Switches
US32DMRJ
HBGQ22P-11ET
Resistors
A101G
3006P-1-205LF
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
View more