Position: Home  > All Categories> Integrated Circuits (ICs) > IRH7150

IRH7150

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current ...

product image

IRH7150 Picture
See larger image
SeekIC No. : 004377938 Detail

IRH7150: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weigh...

IRH7150 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRH7150
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
34
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
21
IDM
 Pulsed Drain Current
136
PD @ TC = 25°C
 Max. Power Dissipation
150
W
 Linear Derating Factor
1.2
W/°C
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
500
mJ
IAR
 Avalanche Current
34
A
EAR
 Repetitive Avalanche Energy
15
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.5
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
  Weight
11.5(Typical)
g
For footnotes refer to the last page




Description

International Rectifier's RADHard HEXFET® technology IRH7150 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRH7150 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
LED Products
LM24P20
KCG057QV1DB-G770
Prototyping Products
AVT4168
DE1
Switches
US32DMRJ
HBGQ22P-11ET
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
View more