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IRHM57Z60

Features: · Single Event Effect (SEE) Hardened· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings· Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermatically Sealed· Electically Isolated· Ceramic Eyelets · Light WeightSpecif...

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SeekIC No. : 004378006 Detail

IRHM57Z60: Features: · Single Event Effect (SEE) Hardened· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings· Dynamic dv/dt Ratings· Simple Drive Requirements· ...

IRHM57Z60 Data Sheet

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Part Number:
IRHM57Z60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
· Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermatically Sealed
· Electically Isolated
· Ceramic Eyelets
· Light Weight


Specifications

 
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
35*
A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
35*

IDM

 Pulsed Drain Current
140
PD @ TC = 25°C Max. Power Dissipation
250
W
  Linear Derating Factor
2.0
W/

VGS

 Gate-to-Source Voltage
±20
V

EAS

 Single Pulse Avalanche Energy
500
mJ

IAR

 Avalanche Current
35
A

EAR

 Repetitive Avalanche Energy
25
mJ

dv/dt

 Peak Diode Recovery dv/dt
1.1
V/ns

TJ
TSTG

 Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
  Weight
9.3 (Typical)
g
* Current is limited by internal wire diameter For footnotes refer to the last page


Description

International Rectifier IRHM57Z60's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHM57Z60 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHM57Z60 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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