IRHM9150 Selling Leads, Price trend, IRHM9150 DataSheet download, circuit diagram from SeekIC.com

Features: Single Event Effect (SEE) HardenedLow RDS(on)Low Total Gate ChargeProton TolerantSimple Drive RequirementsEase of ParallelingHermetically SealedSurface MountCeramic PackageLight WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain ...

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SeekIC No. : 004378025 Detail

IRHM9150: Features: Single Event Effect (SEE) HardenedLow RDS(on)Low Total Gate ChargeProton TolerantSimple Drive RequirementsEase of ParallelingHermetically SealedSurface MountCeramic PackageLight WeightSpec...

IRHM9150 Data Sheet

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Part Number:: IRHM9150
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Product Details

Description

Features:

Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight

Specifications

	Parameter		Units
ID @ VGS = -12V, TC = 25°C	Continuous Drain Current	-22	A
ID @ VGS = -12V, TC = 100°C	Continuous Drain Current	-14
IDM	Pulsed Drain Current	-88
PD @ TC = 25°C	Max. Power Dissipation	150	W
	Linear Derating Factor	1.2	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	500	mJ
IAR	Avalanche Current	-22	A
EAR	Repetitive Avalanche Energy	15	mJ
dv/dt	Peak Diode Recovery dv/dt	-23	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 150	^oC
	Lead Temperature	300 ( 0.063 in. (1.6mm) from case for 10s)	^oC
	Weight	9.3 (typical)	g

Description

International Rectifier IRHM9150's RADHard HEXFET^TMtechnol- ogy provides high performance power MOSFETs for space applications. This technology IRHM9150 has over a de- cade of proven performance and reliability in satellite applications. These devices IRHM9150 have been character- ized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHM9150 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters.

IRHM9150

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