Features: ·Radiation Hardened up to 1 x 105 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Rating·Dynamic dv/dt Rating·Simple Drive Req...
IRHM9230: Features: ·Radiation Hardened up to 1 x 105 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- a...
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Features: ·Radiation Hardened up to 1 x 105 Rads (Si)·Single Event Burnout (SEB) Hardened·Single E...
·Radiation Hardened up to 1 x 105 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Eyelets
·Electrically Isolated
Parameter | IRHM9230 | Units | |
ID @ VGS = -12V, TC = 25V | Continuous Drain Current | -6.5 | A |
ID @ VGS = -12V, TC = 100 | Continuous Drain Current | -4.1 | |
IDM | Pulsed Drain Current | -26 | |
PD @ TC = 25 | Max. Power Dissipation | 75 | W |
Linear Derating Factor | 0.2 | W/K | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 330 | mJ |
IAR | Avalanche Current | -6.5 | A |
EAR | Repetitive Avalanche Energy | 7.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | -5.5 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Package Mounting Surface Temperature | 300 (0.063 in. (1 .6mm) from case for 10s) | ||
Weight | 9.3 (Typical) | g |
International Rectifier IRHM9230's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier IRHM9230's P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices IRHM9230are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors IRHM9230 also feature all of the well-established advantages of MOSFETs, such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.