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IRHMB57064

Features: •Low RDS(on)• Fast Switching• Single Event Effect (SEE) Hardened• Low Total Gate Charge• Simple Drive Requirements• Ease of Paralleling• Hermetically Sealed• Ceramic Eyelets• Electrically Isolated• Light WeightSpecifications ...

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SeekIC No. : 004378031 Detail

IRHMB57064: Features: •Low RDS(on)• Fast Switching• Single Event Effect (SEE) Hardened• Low Total Gate Charge• Simple Drive Requirements• Ease of Paralleling• Hermetica...

IRHMB57064 Data Sheet

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Part Number:
IRHMB57064
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

•Low RDS(on)
• Fast Switching
• Single Event Effect (SEE) Hardened
• Low Total Gate Charge
• Simple Drive Requirements
• Ease of Paralleling
• Hermetically Sealed
• Ceramic Eyelets
• Electrically Isolated
• Light Weight


Specifications

 
Parameter
Units
ID @ VGS = 12V, TC = 25
Continuous Drain Current
45*
A
ID @ VGS = 12V, TC = 100
Continuous Drain Current
45*
IDM
Pulsed Drain Current
180
PD @ TC = 25
Max. Power Dissipation
208
W
Linear Derating Factor
1.67
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
824
mJ
IAR
Avalanche Current
45
A
EAR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
4.3
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
 
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
 
Weight
8.0 (Typical)
g
* Current is limited by package For footnotes refer to the last page


Description

International Rectifier IRHMB57064's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHMB57064 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHMB57064 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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