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IRHMK597160

Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25...

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SeekIC No. : 004378035 Detail

IRHMK597160: Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically ...

IRHMK597160 Data Sheet

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Part Number:
IRHMK597160
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

·Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Electrically Isolated
· Light Weight




Specifications
Parameter
Units
ID @ VGS = -12V, TC = 25
 Continuous Drain Current
45*
A
ID @ VGS = -12V, TC = 100
 Continuous Drain Current
-30
IDM
 Pulsed Drain Current
-180
PD @ TC = 25
 Max. Power Dissipation
208
W
 Linear Derating Factor
1.67
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
480
mJ
IAR
 Avalanche Current
-45
A
EAR
 Repetitive Avalanche Energy
20.8
mJ
dv/dt
Peak Diode Recovery dv/dt
-6.0
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Pack. Mounting Surface Temp.
300 (for 5s)
 Weight
3.7 (Typical)
g

For footnotes refer to the last page




Description

International Rectifier IRHMK597160's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHMK597160 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHMK597160 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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