IRHN8250

International Rectifier IRHN8250 's MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier IRHN8250 's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 10⁵ Rads (Si) total dose. At 1 x 10⁶ Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices IRHN8250 are capable of surviving transient ionization pulses as high as 1 x 10¹² Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier IRHN8250 's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors IRHN8250 also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.