Position: Home  > All Categories> Integrated Circuits (ICs) > IRHNA597260

IRHNA597260

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ...

product image

IRHNA597260 Picture
See larger image
SeekIC No. : 004378076 Detail

IRHNA597260: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic...

IRHNA597260 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRHNA597260
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications

 
Parameter
Units
ID @ VGS = -12V, TC = 25°C
 Continuous Drain Current
-35.5
A
ID @ VGS = -12V, TC = 100°C
 Continuous Drain Current
-22.5
IDM
 Pulsed Drain Current ➀
-142
PD @ TC = 25°C
 Max. Power Dissipation
300
W
Linear Derating Factor
2.4
W/°C
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy ➁
320
mJ
IAR
 Avalanche Current ➀
-35.5
A
EAR
 Repetitive Avalanche Energy ➀
30
mJ
dv/dt
 Peak Diode Recovery dv/dt ➂
10
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
°C
Pckg. Mounting Surface Temp.
300 ( for 5s )
Weight
3.3 ( Typical )
g



Description

International Rectifier IRHNA597260's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHNA597260 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHNA597260 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Undefined Category
VI-B63-IU
X27 589
Optical Inspection Equipment
AA924
A21K4B
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Crystals and Oscillators
WT325BI0030.000000
2SB49
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more