Position: Home  > All Categories> Integrated Circuits (ICs) > IRHNA597Z60

IRHNA597Z60

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Contin...

product image

IRHNA597Z60 Picture
See larger image
SeekIC No. : 004378077 Detail

IRHNA597Z60: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic...

IRHNA597Z60 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRHNA597Z60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -56* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -56*
IDM Pulsed Drain Current -224
PD @ TC = 25°C Max. Power Dissipation 250 W
  Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 1116 mJ
IAR Avalanche Current -56 A
EAR Repetitive Avalanche Energy 25 mJ
dv/dt Peak Diode Recovery dv/dt 0.83 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
  Lead Temperature 300 ( for 5s )
  Weight 3.3 ( Typical ) g



Description

International Rectifier IRHNA597Z60 's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHNA597Z60 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHNA597Z60 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Line Protection, Backups
BX0023
A20B-1008-0550
Switches
US32DMRJ
HBGQ22P-11ET
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Test Equipment
TOP853
TOP2005
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more