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IRHNA67160

Features: ·Low RDS(on)·Fast Switching·Single Event Effect (SEE) Hardened·Low Total Gate Charge·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current ...

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SeekIC No. : 004378079 Detail

IRHNA67160: Features: ·Low RDS(on)·Fast Switching·Single Event Effect (SEE) Hardened·Low Total Gate Charge·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light W...

IRHNA67160 Data Sheet

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Part Number:
IRHNA67160
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low RDS(on)
·Fast Switching
·Single Event Effect (SEE) Hardened
·Low Total Gate Charge
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Ceramic Package
·Light Weight


Specifications

Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 56* A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 56*
IDM Pulsed Drain Current 224
PD @ TC = 25 Max. Power Dissipation 250 W
Linear Derating Factor 2.0 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 462 mJ
IAR Avalanche Current 56 A
EAR Repetitive Avalanche Energy 25 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
Lead Temperature 300 (for 5s)
Weight 3.3 (Typical) g



Description

International Rectifier IRHNA67160's R6TM technology provides superior power MOSFETs for space applications. These devices IRHNA67160 have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHNA67160 retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.




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