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IRHNA67164

Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25ID @ VGS = 12V, TC ...

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IRHNA67164: Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package...

IRHNA67164 Data Sheet

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Part Number:
IRHNA67164
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25

ID @ VGS = 12V, TC = 100

IDM		 Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current 		56*

49

224		 A
PD @ TC = 25 Max. Power Dissipation 250 W
  Linear Derating Factor 2.0 W/
VGS

EAS

IAR		 Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current 		±20

283

56		 V

mJ

A
EAR

dv/dt		 Repetitive Avalanche Energy

Peak Diode Recovery dv/dt 		25

7.5		 mJ

V/ns
TJ

TSTG		 Operating Junction

Storage Temperature Range		 -55 to 150
  Pckg. Mounting Surface Temp. 300 (for 5s)
  Weight 3.3 (Typical) g

For footnotes refer to the last page




Description

International Rectifier IRHNA67164's R6TM technology provides superior power MOSFETs for space applications. These devices IRHNA67164 have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHNA67164 retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.




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