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IRHNA67264

Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic Package ·Light WeightSpecifications Parameter Units ID @ VGS=-12V,TC=25 CContinuous...

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SeekIC No. : 004378082 Detail

IRHNA67264: Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic Package...

IRHNA67264 Data Sheet

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Part Number:
IRHNA67264
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

·Low RDS(on)   
·Fast Switching   
·Single Event Effect (SEE) Hardened 
·Low Total Gate Charge 
·Simple Drive Requirements 
·Ease of Paralleling 
·Hermetically Sealed 
·Surface Mount 
·Ceramic Package 
·Light Weight


Specifications
Parameter
Units
ID @ VGS=-12V,TC=25
 CContinuous Drain Curren
50
A
ID @ VGS=-12V,TC=100
 CContinuous Drain Curren
31.5
IDM
 Pulsed Drain Current
200
PD@ TC= 25
 CMax. Power Dissipatio
250
W
 Linear Derating Factor
2.0
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
240
mJ
IAR
 Avalanche Current
50
A
EAR
 Repetitive Avalanche Energy
25
mJ
dv/dt
 Peak Diode Recovery dv/dt
4.1
V/nS
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300(for 5s )
 Weight
3.3( Typical )
g



Description

International Rectifier IRHNA67264'R6TM  technology provides superior power MOSFETs for space applications.These devices IRHNA67264have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy  Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on)  and faster switching times reduces power loss and increases power density in today's high speed switching applications  such as  DC-DC converters and motor controllers.  These devices IRHNA67264 retain all of the well established  advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.




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