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IRHNA9064

Features: ·Radiation Hardened up to 1 x 105 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Rating·Dynamic dv/dt Rating·Simple Drive Req...

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SeekIC No. : 004378093 Detail

IRHNA9064: Features: ·Radiation Hardened up to 1 x 105 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- a...

IRHNA9064 Data Sheet

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Part Number:
IRHNA9064
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

·Radiation Hardened up to 1 x 105 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Light-Weight




Specifications

  Parameter IRHNA9064 Units
ID @ VGS = -12V, TC = 25V Continuous Drain Current -48 A
ID @ VGS = -12V, TC = 100 Continuous Drain Current -30
IDM Pulsed Drain Current -192
PD @ TC = 25 Max. Power Dissipation 300 W
  Linear Derating Factor 2.4 W/K
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current -48 A
EAR Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt -5.5 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
  Package Mounting Surface Temperature 300 (for 5 sec)
  Weight 2.6 (Typical) g



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