IRHNA9160

International Rectifier's P-Channel RAD HARD technology HEXFETs IRHNA9160  demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs IRHNA9160  retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices IRHNA9160  are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.

Single Event Effect (SEE) testing of International Rectifier's P-Channel RAD HARD HEXFETs IRHNA9160  has demonstrated virtual immunity to SEE failure. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

P- Channel RAD HARD HEXFET transistors IRHNA9160  also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.