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IRHNB7064

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain ...

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SeekIC No. : 004378095 Detail

IRHNB7064: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightS...

IRHNB7064 Data Sheet

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Part Number:
IRHNB7064
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 75* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 56 A
IDM Pulsed Drain Current ➀ 300 A
PD @ TC = 25°C Max. Power Dissipation 300 W
  Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 500 mJ
IAR Avalanche Current ➀ 75* A
EAR Repetitive Avalanche Energy ➀ 30 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 2.5 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 150
  Lead Temperature 300 (for 5s)
  Weight 3.3 (Typical ) g



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