Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current 43 A ...
IRHNB7260: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightS...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
| Parameter | Units | ||
| ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 43 | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 27 | A |
| IDM | Pulsed Drain Current | 172 | A |
| PD @ TC = 25 | Max. Power Dissipation |
300 |
W |
| Linear Derating Factor | 2.4 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 43 | A |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.7 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | |
| Package Mounting Surface Temperature | 300 (for 5 Sec.) | ||
| Weight | 3.5 (Typical ) | g |