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IRHNJ57234SE

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Curre...

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SeekIC No. : 004378106 Detail

IRHNJ57234SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light W...

IRHNJ57234SE Data Sheet

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Part Number:
IRHNJ57234SE
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 10 A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 6.4
IDM Pulsed Drain Current ➀ 40
PD @ TC = 25°C Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 58 mJ
IAR Avalanche Current ➀ 10 A
EAR Repetitive Avalanche Energy ➀ 7.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 2.4 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150 °C
  Pckg. Mounting Surface Temp. 300 (for 5s)
  Weight 1.0(Typical) g



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